HY1920P MOSFET Straight Header Low Input Current of 1-μA

Low Input Current of 1-μA

Waveform storage: 81 waveform pictures

The superior performance of this technique can be measured in improved line regulation

this laser module emits a red beam that is easily visible in different lighting conditions

high-performance connectivity for demanding applications

HY1920P MOSFET Straight Header Low Input Current of 1-μAHY1920P MOSFET Specifications: Type Designator: HY1920P Type of Transistor: MOSFET Type of Control Channel: N Channel Maximum Power Dissipation (Pd): 375 W Maximum Drain Source Voltage Vds : 200 V Maximum Gate Source Voltage Vgs : 20 V Maximum Gate Threshold Voltage Vgs(th) : 4 V Maximum Drain Current Id : 90 A Maximum Junction Temperature (Tj): 175 C Total Gate Charge (Qg): 130. 4 nC Rise Time (tr): 45 nS Drain Source Capacitance (Cd): 392 pF Maximum